Yo Watamura

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

[14p-315-10] Influence of gate recess in AlGaN/GaN HEMTs by neutral beam etching

〇Yo Watamura¹, Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Seiji Samukawa^2,3, Tiichi Otsuji¹, Testuya Suemitsu¹ (1.RIEC, Tohoku Univ., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

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