Tsuyoshi Takahashi

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

4:45 PM - 5:00 PM

[14p-315-14] f_max of 1.3 THz using extended drain-side recess structure in InP-based HEMTs

〇Tsuyoshi Takahashi^1,2, Yoichi Kawano^1,2, Kozo Makiyama^1,2, Shoichi Shiba¹, Masaru Sato^1,2, Yasuhiro Nakasha^1,2, Naoki Hara^1,2 (1.Fujitsu Labs., 2.Fujitsu)