Masahiro Kakuda

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 9:00 AM - 12:00 PM 313 (313)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:45 AM - 10:00 AM

[15a-313-4] Formation of low density InAs/GaAs quantum dots by controlling partial capping process: suppression of background emission by controlling partial capping thickness

〇Masahiro Kakuda¹, Yasutomo Ota¹, Kazuhiro Kuruma², Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

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