Satoshi Shigematsu

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F201 (F201)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

9:30 AM - 9:45 AM

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)