Kazushi Sone

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

△ [15p-315-10] Interface States Density in Al₂O₃/ GaN Structure using O₂ Ashing and O₃ Oxidation

〇Kazushi Sone¹, Junya Matsushita¹, Yuto Ando¹, Kentaro Nagamatsu², Atsushi Tanaka², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, 3.ARC, 4.VBL)