Toshiharu Kubo

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

[15p-315-8] Effect of Al₂O₃ thickness on threshold voltage of SiO₂/Al₂O₃/AlGaN/GaN MIS-HEMTs

〇Toshiharu Kubo¹, Hideaki Zama², Tadamasa Kobayashi², Takashi Egawa¹ (1.Nagoya Inst. of Tech., 2.ULVAC,Inc)