Naoki Takeda

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:45 PM - 6:15 PM 503 (503)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15p-503-1~16] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM

△ [15p-503-10] Effect of gaseous carbon addition in GaN crystal growth by Na-flux method

〇Naoki Takeda¹, Masayuki Imanishi², Kousuke Murakami², Masatoshi Hayashi², Mamoru Imade², Masashi Yoshimura², Yusuke Mori² (1.School of Engineering Osaka Univ., 2.Graduate School of Engineering Osaka Univ.)

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