JUN INAGAKI

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:30 PM - 3:30 PM P8 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.7 Crystal evaluation, impurities and crystal defects

[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

1:30 PM - 3:30 PM

[15p-P8-4] Effect of background charge and plane stress on dopant stability in Ge thin film / Si substrate structure

〇JUN INAGAKI¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)