Yohei Kagoyama

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 11:30 AM

[16a-P5-12] An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET

〇Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takahisa Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

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