SHOHEI HAYASHI

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 11:30 AM

[16a-P5-4] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode

〇SHOHEI HAYASHI^1,2, TAMOTSU YAMASHITA^1,3, SENZAKI JUNJI¹, MIYAZATO MASAKI^1,4, RYO MINA^1,4, MASAAKI MIYAJIMA^1,4, YOSHIYUKI YONEZAWA¹, TOMOHISA KATO¹, KAZUTOSHI KOJIMA¹, HAJIME OKUMURA¹ (1.AIST, 2.Toray Research Center Inc., 3.SHOWA DENKO K.K., 4.Fuji Electric Co. Ltd.)

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