Yuji Kiuchi

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

11:30 AM - 11:45 AM

[17a-301-10] Impact of NO POA on leakage current conduction mechanism of thermally grown SiO2 for 4H-SiC C-face substrate

〇Yuji Kiuchi^1,2, Mitsuru Sometani¹, Dai Okamoto³, Tetsuo Hatakeyama¹, Shinsuke Harada¹, Hiroshi Yano³, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.New Japan Radio co., 3.Univ. Tsukuba)

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