Hiroyuki Kajifusa

→ Search for Hiroyuki Kajifusa in Google Scholar

Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM

△ [17p-301-3] Kinetic difference between the changes of interface defect density and oxide trap density during wet oxidation observed in the grown-thickness dependence of 4H-SiC C-face MOS characteristics

〇Hiroyuki Kajifusa¹, Koji Kita¹ (1.The Univ. of Tokyo)