YOSHIHITO KATSU

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

3:30 PM - 3:45 PM

△ [17p-301-6] Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions

〇YOSHIHITO KATSU¹, Hidenori Tsuji^1,2, Ayele Kidist Moges¹, Mitsuru Sometani^1,3, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd., 3.AIST)

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