Munetaka Noguchi

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Amishiro Hiroyuki¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Univ. of Tokyo)

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