Tsuyoshi Nagase

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17p-P3-1~22] 15.4 III-V-group nitride crystals

1:30 PM - 3:30 PM

[17p-P3-14] Basic study for thin film growth of GaN by chemical vapor deposition using Ga vapor

〇(M1)Tsuyoshi Nagase¹, Kensuke Fukasawa¹, Yuuichirou Masuda¹, Tetsuya Kouno¹, Yuuko Kominami¹, Kazuhiko Hara^2,3 (1.Shizuoka Univ., 2.Grad School of Integrated S & T, Shizuoka Univ., 3.Res Inst of Electron, Shizuoka Univ.)

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