taiki hata

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17p-P3-1~22] 15.4 III-V-group nitride crystals

1:30 PM - 3:30 PM

[17p-P3-2] Characterization of AlON buffer layer to improve GaN growth on sapphire substrate

〇taiki hata¹, Takahiro Yamazaki¹, Yusuke Yamane¹, Kazuhide Kumakura², Hideki Yamamoto², Toshiki Makimoto¹ (1.Waseda Univ., 2.NTT BRL.)