Oral presentation

21 Joint Session K » 21.1 Joint Session K

[14p-502-1~15] 21.1 Joint Session K

Tue. Mar 14, 2017 1:45 PM - 5:45 PM 502 (502)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [14p-502-1] Study on Surface Band Bending of α-Ga₂O₃

〇(M1)Yoshiki Fujiki¹, Junjiro Kikawa¹, Tsutomu Araki¹, Yasushi Nanishi¹, Masaya Oda² (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)

2:00 PM - 2:15 PM

[14p-502-2] Evaluation of defects in EFG-grown β-Ga₂O₃ crystals (1) - Dislocations corresponding to arrays of etch pits on (201) substrates -

〇Osamu Ueda¹, Noriaki Ikenaga¹, Tomoya Moribayashi², Kimiyoshi Koshi³, Kazuyuki Iizuka³, Akito Kuramata³, Makoto Kasu² (1.Kanazawa Inst. Tech., 2.Saga Univ., 3.Tamura Corp.)

2:15 PM - 2:30 PM

[14p-502-3] Optical and electric properties for VB, FZ and EFG grown β-Ga₂O₃ single crystals

〇Takahiro Nakamura¹, Yuta Uchiyama¹, Toshinori Taishi¹, Keigo Hoshikawa¹ (1.Shinshu Univ.)

2:30 PM - 2:45 PM

△ [14p-502-4] Relationship between crystal defects and leakage current of (-201) β-Ga₂O₃
Schottky barrier diodes

〇Tomoya Moribayashi¹, Akihiro Hashiguchi¹, Takayoshi Oshima¹, Kenji Hanada¹, Toshiyuki Oishi¹, Kimiyoshi Koshi², Kohei Sasaki², Akito Kuramata², Osamu Ueda³, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)

2:45 PM - 3:00 PM

[14p-502-5] Relationship of crystal defects and leakage current of (001) β-Ga₂O₃Schottky barrier diodes

〇Akihiro Hashiguchi¹, Tomoya Moribayashi¹, Takahito Oshima¹, Toshiyuki Oishi¹, Kimiyoshi Koshi², Kouhei Sasaki², Akito Kuramata², Osamu Ueda³, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)

3:00 PM - 3:15 PM

[14p-502-6] Temperature Dependence of Current-voltage Characteristics of Hetero-junction Diode between NiO and beta-Ga₂O₃

〇Shinji Nakagomi¹, Shohei Kubo¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu)

3:15 PM - 3:30 PM

▲ [14p-502-7] Effect of Nitridation on Properties of AlN/β-Ga₂O₃ Composite Structures

〇Ravikiran Lingaparthi¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corporation)

3:45 PM - 4:00 PM

[14p-502-8] Solid-phase crystallization of amorphous V-doped ZnO film on Al₂O₃(11-20) substrate

〇Kenta Shito¹, Akihiro Watanabe², Hioshi Chiba^2,3, Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad.Sch.Eng.Tohoku Univ., 3.JSPS Research Fellow DC)

4:00 PM - 4:15 PM

[14p-502-9] Initial growth pattern of V and N co-doped ZnO on Al₂O₃(001) substrate

〇Tomohiro Kanematsu¹, Hiroshi Chiba^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow DC)

4:15 PM - 4:30 PM

△ [14p-502-10] Epitaxial Growth of NiO thin films on α-Al₂O₃ substrates by mist CVD method

〇Takumi Ikenoue¹, Junki Inoue², Masao Miyake¹, Tetsuji Hirato¹ (1.Graduate School of Energy Sci., Kyoto Univ., 2.Faculty of Eng., Kyoto Univ.)

4:30 PM - 4:45 PM

[14p-502-11] MOCVD deposition of Fe-doped NiO films using Tris(2,4-pentanedionato)iron(Ⅲ) as Fe source

〇Shungo Sakai¹, Kentaro Taguchi¹, Kazuki Fujiwara¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst. of Tech., 2.SIT Research Center for Green Innovation)

4:45 PM - 5:00 PM

△ [14p-502-12] Relation between Electrical and Optical properties of p-type NiO Films

〇Mizuki Ono¹, Takeyoshi Onuma^1,2, Ryosuke Goto¹, Kohei Sasaki^3,2, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Masataka Higashiwaki², Akito Kuramata³, Shigenobu Ymakoshi³, Mitsunobu Sato¹, Tohru Honda¹ (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

5:00 PM - 5:15 PM

[14p-502-13] MOCVD growth of CuO thin films on C-sapphire, YSZ (111) and MgO (111) substrates

〇Kazuki Fujiwara¹, Kentaro Taguchi¹, Syungo Sakai¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst Tech., 2.SIT Research Center.)

5:15 PM - 5:30 PM

△ [14p-502-14] Reaction mechanism analysis for fabricating high quality metal oxide thin film by mist CVD (Ⅰ)

〇(B)Misaki Nishi¹, Yuta Suwa¹, Liu Li¹, Phimolphan Rutthongja¹, Dang Gian², Toshiyuki Kawaharamura^1,2 (1.Sys.Eng.Kochi Univ.of Tech, 2.Res.Inst.Kochi Univ.of Tech)

5:30 PM - 5:45 PM

[14p-502-15] Low Temperature Formation of ZnO Films by Mist-CVD

〇Tomoki Mikuriya¹, Ogawa Hirotaka¹, Kido Tomotaka¹, Yatabe Zenji², Nishi Yasutaka³, Nakazumi Masaru³, Iwahori Koichiro³, Nara Kei³, Namihira Takao⁴, Nakamura Yusui^5,6 (1.GSST.Kumamoto Univ., 2.POIE Kumamoto Univ., 3.Nikon Conrporation., 4.IPPS.Kumamoto Univ., 5.FAST. Kumamoto Univ., 6.Phoenics.)

Session information

[14p-502-1~15] 21.1 Joint Session K

△ [14p-502-1] Study on Surface Band Bending of α-Ga₂O₃

[14p-502-2] Evaluation of defects in EFG-grown β-Ga₂O₃ crystals (1) - Dislocations corresponding to arrays of etch pits on (201) substrates -

[14p-502-3] Optical and electric properties for VB, FZ and EFG grown β-Ga₂O₃ single crystals

△ [14p-502-4] Relationship between crystal defects and leakage current of (-201) β-Ga₂O₃
Schottky barrier diodes

[14p-502-5] Relationship of crystal defects and leakage current of (001) β-Ga₂O₃Schottky barrier diodes

[14p-502-6] Temperature Dependence of Current-voltage Characteristics of Hetero-junction Diode between NiO and beta-Ga₂O₃

▲ [14p-502-7] Effect of Nitridation on Properties of AlN/β-Ga₂O₃ Composite Structures

[14p-502-8] Solid-phase crystallization of amorphous V-doped ZnO film on Al₂O₃(11-20) substrate

[14p-502-9] Initial growth pattern of V and N co-doped ZnO on Al₂O₃(001) substrate

△ [14p-502-10] Epitaxial Growth of NiO thin films on α-Al₂O₃ substrates by mist CVD method

[14p-502-11] MOCVD deposition of Fe-doped NiO films using Tris(2,4-pentanedionato)iron(Ⅲ) as Fe source

△ [14p-502-12] Relation between Electrical and Optical properties of p-type NiO Films

[14p-502-13] MOCVD growth of CuO thin films on C-sapphire, YSZ (111) and MgO (111) substrates

△ [14p-502-14] Reaction mechanism analysis for fabricating high quality metal oxide thin film by mist CVD (Ⅰ)

[14p-502-15] Low Temperature Formation of ZnO Films by Mist-CVD

Authentication

Session information

[14p-502-1~15] 21.1 Joint Session K

△ [14p-502-1] Study on Surface Band Bending of α-Ga2O3

△ [14p-502-4] Relationship between crystal defects and leakage current of (-201) β-Ga2O3Schottky barrier diodes

▲ [14p-502-7] Effect of Nitridation on Properties of AlN/β-Ga2O3 Composite Structures

△ [14p-502-10] Epitaxial Growth of NiO thin films on α-Al2O3 substrates by mist CVD method

△ [14p-502-12] Relation between Electrical and Optical properties of p-type NiO Films

△ [14p-502-14] Reaction mechanism analysis for fabricating high quality metal oxide thin film by mist CVD (Ⅰ)

Authentication

△ [14p-502-1] Study on Surface Band Bending of α-Ga₂O₃

△ [14p-502-4] Relationship between crystal defects and leakage current of (-201) β-Ga₂O₃
Schottky barrier diodes

▲ [14p-502-7] Effect of Nitridation on Properties of AlN/β-Ga₂O₃ Composite Structures

△ [14p-502-10] Epitaxial Growth of NiO thin films on α-Al₂O₃ substrates by mist CVD method