Oral presentation

21 Joint Session K » 21.1 Joint Session K

[15a-502-1~12] 21.1 Joint Session K

Wed. Mar 15, 2017 9:00 AM - 12:15 PM 502 (502)

Mamoru Furuta(Kochi Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-502-1] Electrical and optical properties of Al and V co-doped ZnO thin films

〇Chisato Tateyama¹, Tomoya Suzuki², Hiroshi Chiba^2,3, Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad.Sch.Eng.Tohoku Univ., 3.JSPS Research Fellow DC)

9:15 AM - 9:30 AM

[15a-502-2] The controllable crystallographic orientation of polycrystalline transparent conductive Al-doped ZnO films deposited by direct current magnetron sputtering

〇(PC)Junichi Nomoto¹, Hisashi Kitami^1,2, Takeshi Watanabe³, Hisao Makino¹, Toshiyuki Sakemi², Tetsuya Yamamoto¹ (1.Research Inst. Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd., 3.Japan Synchrotron Radiation Research Inst. (JASRI) SPring-8)

9:30 AM - 9:45 AM

[15a-502-3] Homogeneous and Low Resistivity Films of Ga-doped ZnO by Zn Layer Insertion

〇Yasuji Yamada¹, Orkut Sancakoglu¹, Rei Sugiura¹, Motonari Shoriki¹, Shuhei Funaki¹ (1.Shimane Univ.)

9:45 AM - 10:00 AM

[15a-502-4] Property change of zinc oxide films by element adsorption and desorption annealing

〇rei sugiura¹, Motonari Syoriki¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane univ)

10:00 AM - 10:15 AM

[15a-502-5] Relationship between electrical and crystallographical properties in polycrystalline transparent conducting ZnO thin films

〇ryousuke uozaki¹, kyosuke watanabe¹, toshihiro miyata¹, tadatsugu minami¹ (1.OEDS R&D Center, K I T)

10:15 AM - 10:30 AM

△ [15a-502-6] Time-resolved probe measurement of after-arc plasma type apparatus for the irradiation of electronegative oxygen ions with dc arc discharge

〇Hisashi Kitami^1,2, Junichi Nomoto², Toshiyuki Sakemi¹, Hisaso Makino^2,3, Yasushi Aoki¹, Tetsuya Yamamoto² (1.Sumitomo Heavy Industries, Ltd., 2.Research Inst., Kochi Univ. Tech., 3.Kochi Univ. Tech.)

10:45 AM - 11:00 AM

▲ [15a-502-7] Electric Field Thermopower Modulation of BaSnO₃ Epitaxial Film

〇(P)ANUPKUMAR VINODRAY SANCHELA¹, HIROMICHI OHTA¹ (1.RIES-Hokkaido Univ.)

11:00 AM - 11:15 AM

[15a-502-8] New wide gap oxide semiconductor Sn₂Ta₂O₇ with bipolarity in conduction

〇Naoto Kikuchi¹, Shintaro Ikeda², Akane Samizo², Yoshihiro Aiura¹, Keishi Nishio² (1.AIST, 2.Tokyo Univ. of Sci.)

11:15 AM - 11:30 AM

△ [15a-502-9] New p-type semicondoutor Sn₂Nb_2-xTa_xO₇with variable band gap

〇Akane Samizo², Kikuchi Naoto¹, Ikeda Shintaro², Aiura Yoshihiro¹, Nishio Keishi² (1.AIST, 2.Tokyo Univ. Sci.)

11:30 AM - 11:45 AM

[15a-502-10] Solid-phase crystallization of amorphous Mg-CuCrO₂ thin films deposited by RF magnetron sputtering in Ar/N₂ gas mixture

〇Naotoshi Hosaka¹, Hiroshi Chiba^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow)

11:45 AM - 12:00 PM

△ [15a-502-11] Effect of N and Mg doping on solid-phase crystallization of amorphous CuCrO₂ thin films

〇Hiroshi Chiba^1,2, Naotoshi Hosaka¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow)

12:00 PM - 12:15 PM

[15a-502-12] Development of Low Resistivity ITO Film Deposited at Low Temperature Sputtering (2)

〇Yukiaki Oono¹, Kobayashi Motoshi¹, Takahashi Hirohisa¹, Arai Makoto¹, Ishibashi Satoru¹ (1.ULVAC, Inc.)

Session information

[15a-502-1~12] 21.1 Joint Session K

[15a-502-1] Electrical and optical properties of Al and V co-doped ZnO thin films

[15a-502-2] The controllable crystallographic orientation of polycrystalline transparent conductive Al-doped ZnO films deposited by direct current magnetron sputtering

[15a-502-3] Homogeneous and Low Resistivity Films of Ga-doped ZnO by Zn Layer Insertion

[15a-502-4] Property change of zinc oxide films by element adsorption and desorption annealing

[15a-502-5] Relationship between electrical and crystallographical properties in polycrystalline transparent conducting ZnO thin films

△ [15a-502-6] Time-resolved probe measurement of after-arc plasma type apparatus for the irradiation of electronegative oxygen ions with dc arc discharge

▲ [15a-502-7] Electric Field Thermopower Modulation of BaSnO₃ Epitaxial Film

[15a-502-8] New wide gap oxide semiconductor Sn₂Ta₂O₇ with bipolarity in conduction

△ [15a-502-9] New p-type semicondoutor Sn₂Nb_2-xTa_xO₇with variable band gap

[15a-502-10] Solid-phase crystallization of amorphous Mg-CuCrO₂ thin films deposited by RF magnetron sputtering in Ar/N₂ gas mixture

△ [15a-502-11] Effect of N and Mg doping on solid-phase crystallization of amorphous CuCrO₂ thin films

[15a-502-12] Development of Low Resistivity ITO Film Deposited at Low Temperature Sputtering (2)

Authentication

Session information

[15a-502-1~12] 21.1 Joint Session K

△ [15a-502-6] Time-resolved probe measurement of after-arc plasma type apparatus for the irradiation of electronegative oxygen ions with dc arc discharge

▲ [15a-502-7] Electric Field Thermopower Modulation of BaSnO3 Epitaxial Film

△ [15a-502-9] New p-type semicondoutor Sn2Nb2-xTaxO7 with variable band gap

△ [15a-502-11] Effect of N and Mg doping on solid-phase crystallization of amorphous CuCrO2 thin films

Authentication

▲ [15a-502-7] Electric Field Thermopower Modulation of BaSnO₃ Epitaxial Film

△ [15a-502-9] New p-type semicondoutor Sn₂Nb_2-xTa_xO₇with variable band gap

△ [15a-502-11] Effect of N and Mg doping on solid-phase crystallization of amorphous CuCrO₂ thin films