〇Nozomu Yasui¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Hiroaki Ohfuji⁴, Youhei Kojima⁴, Satoshi Nakano⁵ (1.Okayama Univ.of Sci., 2.Tokyo univ., 3.IPM, Okayama Univ., 4.GRC, Ehime Univ., 5.NIMS)

10:30 AM - 10:45 AM

[16a-B5-6] Effect of BaSi₂ template layer on p-BaSi₂/n-Si solar cells performance

〇Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.univ. of Tsukuba)

10:45 AM - 11:00 AM

[16a-B5-7] Relationship between p-BaSi₂ thickness and p-BaSi₂/n-Si solar cells performance

〇Yudai Yamashita¹, Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

11:00 AM - 11:15 AM

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

〇(D)Tianguo Deng¹, Ryota Takabe¹, Zhihao Xu¹, Kaoru Toko¹, Kazuhiro Gotoh², Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

11:15 AM - 11:30 AM

△ [16a-B5-9] Development of preparation method of p-type BaSi₂ thin films for Si heterojunction solar cells application

〇Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kosuke Hara², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. Yamanashi)

11:30 AM - 11:45 AM

[16a-B5-10] Reduction of contact resistance between surface electrode and Sb-doped n-BaSi₂ for p-n homojunction solar cells

〇Komomo Kodama¹, Ryota Takabe¹, Suguru Yachi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:45 AM - 12:00 PM

[16a-B5-11] Reduction of Contact Resistance of a-Si/BaSi₂ Deposited by Vacuum Evaporation

Takamichi Suhara¹, 〇Yoshihiko Nakagawa¹, Kosuke O. Hara², Yasuyoshi Kurokawa¹, Takashi Suemasu³, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Univ. of Tsukuba)

Session information

[16a-B5-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-B5-1] Evaluation of BaSi₂ thin film fabricated on textured Si substrates by thermal evaporation

[16a-B5-2] Evaluation of crystal structure of BaSi₂ films grown on 3C-SiC films

[16a-B5-3] Preparation of Mg₂Si thin films by Mg/Si co-sputter deposition on sapphire substrate

[16a-B5-4] Reactive Deposition Epitaxy of SrGe₂ thin films on Ge substrates

[16a-B5-5] High-pressure & high-temperature synthesis of rhenium carbide with carbon nitride and rhenium precursor

[16a-B5-6] Effect of BaSi₂ template layer on p-BaSi₂/n-Si solar cells performance

[16a-B5-7] Relationship between p-BaSi₂ thickness and p-BaSi₂/n-Si solar cells performance

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

△ [16a-B5-9] Development of preparation method of p-type BaSi₂ thin films for Si heterojunction solar cells application

[16a-B5-10] Reduction of contact resistance between surface electrode and Sb-doped n-BaSi₂ for p-n homojunction solar cells

[16a-B5-11] Reduction of Contact Resistance of a-Si/BaSi₂ Deposited by Vacuum Evaporation

Authentication

Session information

[16a-B5-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [16a-B5-8] Characterization of p-BaSi2/n-Si solar cells using Boron-doped p-BaSi2 on textured n-Si (001) grown by molecular beam epitaxy

△ [16a-B5-9] Development of preparation method of p-type BaSi2 thin films for Si heterojunction solar cells application

Authentication

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

△ [16a-B5-9] Development of preparation method of p-type BaSi₂ thin films for Si heterojunction solar cells application