Oral presentation

[14p-E205-1~14] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

Tue. Mar 14, 2017 1:45 PM - 5:30 PM E205 (E205)

Hajime Okamoto(NTT), Toshiyuki Ihara(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

▼ [14p-E205-1] Analysis on Optically-detected Electron Spin Resonance
in Single Self-Assembled Quantum Dots

〇(D)CheeFai Fong^1,3, Evgeny Chekhovich⁴, Ata Ulhaq⁴, Maurice Skolnick⁴, Yasutomo Ota^2,3, Satoshi Iwamoto^1,2,3, Yasuhiko Arakawa^1,2,3 (1.Inst. of Industrial Science, 2.Nanoquine, 3.Univ. of Tokyo, 4.Univ. of Sheffield)

2:00 PM - 2:15 PM

[14p-E205-2] Investigation for high powered LED using GaN nanowire.

〇Kyouhei Nokimura¹, Yuki kurisaki¹, Satoshi Kamiyama¹, Tetsuya Takeuti¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

2:15 PM - 2:30 PM

[14p-E205-3] A perfect superlattice with aligned plane orientation of PbS quantum dots

〇Satoshi Fujimoto¹, Fumimasa Suetsugu¹, kohki mukai¹ (1.Graduate School of Engineering, Yokohama National Univ.)

2:30 PM - 2:45 PM

[14p-E205-4] Size expansion of PbS quantum dots by silica coating for position control

〇Isao Okumura¹, Niwa Keisuke¹, Mukai Kohki¹ (1.Graduate School of Engineering, Yokohama National Univ.)

2:45 PM - 3:00 PM

[14p-E205-5] Emission control of PbS quantum dots by tunable all-Si optical microcavity

〇Yuuto Nakatsuka¹, Kei Shibata¹, Masakazu Ikai², Kohki Mukai^1,2 (1.Graduate School of Engineering, Yokohama National Univ., 2.College of Engineering, Yokohama Natioal Univ.)

3:00 PM - 3:15 PM

[14p-E205-6] Structural analysis of GaN-based multi-quantum wells on a single nanowire using an X-ray micro beam

〇(M1)Ryoma Seiki¹, Hiroki Shibuya¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura², Kohei Iwase¹, Takao Miyajima¹, Satoshi Kamiyama¹, Daichi Imai¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki¹ (1.Meijo Univ., 2.JASRI)

3:15 PM - 3:30 PM

△ [14p-E205-7] Near-surface energy band analysis of InAs quantum dots using KFM

〇(M2)Tomohiro Kobayashi¹, Ko Takabayashi¹, Kenichi Shimomura¹, Yuwei Zhang¹, Fumihiko Yamada¹, Itaru Kamiya¹ (1.Toyota Tech. Inst)

3:45 PM - 4:00 PM

[14p-E205-8] Photoluminescence of In-introduced GaAs Nanowires by using the Material Conversion

〇Marina Nakano¹, Takuya Goda¹, Tetsuo Ikari¹, Kohei Nishioka², Fumitaro Ishikawa², Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.Ehime Univ.)

4:00 PM - 4:15 PM

[14p-E205-9] Deposition of ZnO on porous alumina

〇Naruhisa Tsukase¹, Hiroyuki Taira¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri. & Tech.)

4:15 PM - 4:30 PM

[14p-E205-10] Transfer of porous alumina mask pattern to GaAs substrate

〇Mai Sogame¹, Takumi Nakamura¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri.&Tech.)

4:30 PM - 4:45 PM

[14p-E205-11] Magnetic-Field-Assisted Anodization of Aluminium Plate

〇Yusuke Hisajima¹, Jun Kimura¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri & Tech)

4:45 PM - 5:00 PM

[14p-E205-12] Structure and optical properties of organic-inorganic hybrid ZnTe nanosheet superlattices

〇(M2)Kenta Kusaka¹, Kiyoto Matsuishi¹ (1.Tsukuba Univ.)

5:00 PM - 5:15 PM

[14p-E205-13] Site-Selectiveness of Dopants in GaAs Substrate Clarified by Home-Built NMR

Masahiro Sakai¹, Kohsuke Ikeda¹, 〇Susumu Sasaki², Momoko Nagatake², Arisa Tomaru², Hiroki Nishida² (1.Niigata Univ. Grad., 2.Niigata Univ. Eng.)

5:15 PM - 5:30 PM

[14p-E205-14] Increase in wavelength of terahertz wave emission from GaAs surface due to strain control around InAs quantum dots

〇Osamu Kojima¹, Ryo Izumi¹, Takashi Kita¹ (1.Kobe Univ.)

Poster presentation

[15a-P9-1~4] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

Wed. Mar 15, 2017 9:30 AM - 11:30 AM P9 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

▲ [15a-P9-1] Optical properties of InAs/GaAs quantum dots grown with different growth modes

〇(PC)Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

9:30 AM - 11:30 AM

[15a-P9-2] Spectro-ellipsometric studies of the films composed of the different nanocrystals

〇Takuya Murakami¹, DaeGwi Kim², Kazuki Wakita³, YongGu Shim¹ (1.Osaka Pref. Univ., 2.Osaka City Univ., 3.Chiba Inst. Tech.)

9:30 AM - 11:30 AM

[15a-P9-3] Well width dependence of carrier relaxation time of GaAs/AlGaAs single quantum well on the same substrate

〇Kizuku Yamada¹, Takuya Kamezaki¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Satoshi Shimomura², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Ehime Univ.)

9:30 AM - 11:30 AM

[15a-P9-4] Well width dependence of spin relaxation time of GaAs/AlGaAs single quantum well on the same substrate

〇Takuya Kamezaki¹, Kizuku Yamada¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Satoshi Shimomura², Atushi Tackeuchi¹ (1.Waseda Univ., 2.Ehime Univ.)

Sessions

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[14p-E205-1~14] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

▼ [14p-E205-1] Analysis on Optically-detected Electron Spin Resonance
in Single Self-Assembled Quantum Dots

[14p-E205-2] Investigation for high powered LED using GaN nanowire.

[14p-E205-3] A perfect superlattice with aligned plane orientation of PbS quantum dots

[14p-E205-4] Size expansion of PbS quantum dots by silica coating for position control

[14p-E205-5] Emission control of PbS quantum dots by tunable all-Si optical microcavity

[14p-E205-6] Structural analysis of GaN-based multi-quantum wells on a single nanowire using an X-ray micro beam

△ [14p-E205-7] Near-surface energy band analysis of InAs quantum dots using KFM

[14p-E205-8] Photoluminescence of In-introduced GaAs Nanowires by using the Material Conversion

[14p-E205-9] Deposition of ZnO on porous alumina

[14p-E205-10] Transfer of porous alumina mask pattern to GaAs substrate

[14p-E205-11] Magnetic-Field-Assisted Anodization of Aluminium Plate

[14p-E205-12] Structure and optical properties of organic-inorganic hybrid ZnTe nanosheet superlattices

[14p-E205-13] Site-Selectiveness of Dopants in GaAs Substrate Clarified by Home-Built NMR

[14p-E205-14] Increase in wavelength of terahertz wave emission from GaAs surface due to strain control around InAs quantum dots

[15a-P9-1~4] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

▲ [15a-P9-1] Optical properties of InAs/GaAs quantum dots grown with different growth modes

[15a-P9-2] Spectro-ellipsometric studies of the films composed of the different nanocrystals

[15a-P9-3] Well width dependence of carrier relaxation time of GaAs/AlGaAs single quantum well on the same substrate

[15a-P9-4] Well width dependence of spin relaxation time of GaAs/AlGaAs single quantum well on the same substrate

Authentication

Sessions

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[14p-E205-1~14] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

▼ [14p-E205-1] Analysis on Optically-detected Electron Spin Resonancein Single Self-Assembled Quantum Dots

△ [14p-E205-7] Near-surface energy band analysis of InAs quantum dots using KFM

[15a-P9-1~4] 13.7 Nano structures and quantum phenomena

3.11と13.7のコードシェアセッションあり

▲ [15a-P9-1] Optical properties of InAs/GaAs quantum dots grown with different growth modes

Authentication

▼ [14p-E205-1] Analysis on Optically-detected Electron Spin Resonance
in Single Self-Assembled Quantum Dots