[14p-E205-1~14] 13.7 Nano structures and quantum phenomena

[14p-E205-13] Site-Selectiveness of Dopants in GaAs Substrate Clarified by Home-Built NMR

Masahiro Sakai¹, Kohsuke Ikeda¹, 〇Susumu Sasaki², Momoko Nagatake², Arisa Tomaru², Hiroki Nishida² (1.Niigata Univ. Grad., 2.Niigata Univ. Eng.)

Keywords:Nuclear Magnetic Resonance, doped GaAs substrate, site-selectiveness

It has not been experimentally clarified where the doped atoms, such as Si or Cr, reside in GaAs substrate. In principle, nuclear magnetic resonance (NMR), where nuclear spins are utilized as built-in probes in the material in concern, should be one of the best methods. To the best of our knowledge, however, there have been no reports on this issue. Here, we have succeeded in identifying the positions of doped Si or Cr atoms in GaAs substrate. In this study, we made the best use of our home-built NMR measurement systems with our own modifications.