[14a-315-1~8] 13.8 Compound and power electron devices and process technology

△ [14a-315-4] Characterization of hole traps in n-type GaN homoepitaxial layers by MCTS using sub-bandgap light excitation

〇Kazutaka Kanegae¹, Masahiro Horita², Tsunenobu Kimoto², Jun Suda^2,3 (1.Kyoto Univ., 2.Dept. of Electron. Sci. & Eng., Kyoto Univ., 3.Nagoya Univ. IMaSS)

Keywords:GaN, MCTS, sub-bandgap light

In order to improve the performance of the GaN power device, it is important to elucidate the relationship between the point defects and the deep levels in the GaN homoepitaxial layers. For this purpose, not only the electron traps but also comprehensive understanding including the hole traps is required. In this study, uniform hole occupation state of hole traps was formed under Schottky electrodes by MCTS using sub-bandgap light excitation. By using this method, it is possible to compare the density of hole traps in the state of hole occupation regardless of electrode size.