[14a-315-1~8] 13.8 Compound and power electron devices and process technology

[14a-315-6] Deep level trap in homoepitaxial n-type GaN formed by electron beam irradiation

〇Masahiro Horita¹, Tetsuo Narita², Tetsu Kachi³, Tsutomu Uesugi², Jun Suda¹ (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ.)

Keywords:gallium nitride, deep level

We have investigated deep level traps in n-type GaN homoepitaxially grown by MOVPE where point defects are intentionally introduced. Electron beam irradiation to n-GaN was performed at a lower energy compared with previous reports, which preferentially produces N atom displacement. We observed several peaks in the DLTS measurement of electron-irradiated n-GaN. Since part of peaks in the previous report was observed in our study, the origin of these deep levels is related to N atom displacement.