[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [14a-501-4] Analysis of bulk spin-polarization in Co₂FeGa_0.5Ge_0.5 thin films via anisotropic magnetoresistance effect

〇Yuya Sakuraba¹, Satoshi Kokado², Tomoya Nakatane¹, Li Songtian¹, Takao Furubayashi¹, Hiroo Tajiri³, Yoshio Miura^1,4, Kazuhiro Hono¹ (1.NIMS, 2.Shizuoka Univ., 3.JASRI, 4.KIT)

Keywords:half-metallic Heusler, CPP-GMR

Recently giant MR ratio over 80% at RT were reported in CPP-GMR devices with hafl-metallic Heusler electrodes. However, the origin of large temperature dependence of MR ratio has not been clearified so far. In this talk, we will report our recent analysis for temperature dependence of bulk spin-polarization in CFGG films having different compostion ratios via anisotropic magnetoresistance effect.