The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

Tue. Mar 14, 2017 9:00 AM - 12:00 PM 501 (501)

Yoichi Shiota(AIST)

10:00 AM - 10:15 AM

[14a-501-5] Magnetic tunnel junctions with a Li-substituted MgAl2O4 barrier

Thomas Scheike1, Hiroaki Sukegawa1, Seiji Mitani1,2 (1.NIMS, 2.Univ. Tsukuba)

Keywords:MTJ, spinel, TMR

In this study, the occurence of coherent tunneling in a magnetic tunnel junction with a Li-substituted MgAl2O4 (LixMg1-2xAl2+xO4) barrier and Fe electrodes is shown. We choose Li as a substitution element in MgAl2O4 because it is the lightest alkali metal in the periodic table and it is able to form stable spinel oxides due to its small ionic radius (i.e. Li0.5Al2.5O5).
The XRD analysis confirmed an epitaxial growth with (001) orientation for both the bottom- and top- Fe electrodes, revealing an epitaxial growth of the Li-substituted MgAl2O4 barrier. Local minima in the differential conductance spectra and a weak temperature dependence of the resistance in the parallel magnetization state suggest the existence of coherent tunneling in the devices.