[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [14a-501-6] Effects of layer thickness and microstructure of CPP-GMR with Ag/InZnO/Zn spacer

〇Tomoya Nakatani¹, Taisuke Sasaki¹, Songtian Li¹, Yuya Sakuraba¹, Takao Furubayashi¹, Kazuhiro Hono¹ (1.NIMS)

Keywords:CPP-GMR, Heusler alloy, Oxide spacer

A systematic investigation on the CPP-GMR property using conductive oxide-based spacer layer and its correlation with the the microctructure will be presented.