[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

▼ [14a-501-7] Large magnetoresistance effect in magnetic tunnel junctions with a Cu(In_0.8Ga_0.2)Se₂ barrier with a low resistance-area product

〇Koki Mukaiyama¹, Keisuke Masuda¹, Shinya Kasai^1,2, Yukiko Takahashi¹, Pohang Cheng^1,3, Ikhtiar Ikhtiar^1,3, Yoshio Miura^1,4, Tadakatsu Ohkubo¹, Seiji Mitani^1,3, Kazuhiro Hono^1,3 (1.NIMS, 2.RIKEN, 3.Univ. of Tsukuba, 4.Kyoto Inst. of Tech.)

Keywords:Magnetoresistance effect, Semiconsuctor, Heusler alloy