[14a-501-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [14a-501-6] Effects of layer thickness and microstructure of CPP-GMR with Ag/InZnO/Zn spacer

〇中谷 友也¹、佐々木 泰祐¹、李 松田¹、桜庭 裕弥¹、古林 孝夫¹、宝野 和博¹ (1.物材機構)

キーワード：CPP-GMR, Heusler alloy, Oxide spacer

A systematic investigation on the CPP-GMR property using conductive oxide-based spacer layer and its correlation with the the microctructure will be presented.