[14a-503-1~12] 15.4 III-V-group nitride crystals

[14a-503-10] Growth of N-polar InN on Sapphire by DERI Method

〇(M1)Yuuto Kubonaka¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ)

Keywords:Indium nitride, N-polar, MBE

InN, a part of III-nitrides, is used future photonic and electronic devices because it has large mobility, high peak and saturation velocities and small direct bandgap. We reported new growth method of InN named droplet elimination by radical-beam irradiation (DERI) . These growth techniques improved InN quality.N-polar growth is possible to increase temperature (about 100℃) because N polarity is stable compared to the In polarity. I will report that N-polar InN is grown on sapphire substrate by DERI method.