The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-503-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 14, 2017 9:00 AM - 12:15 PM 503 (503)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

9:45 AM - 10:00 AM

[14a-503-4] Development of heavily doped high electron mobility n-type GaN by pulsed sputtering

〇Kohei Ueno1, Yasuaki Arakawa1, Atsushi Kobayashi1, Jitsuo Otha1,2, Hiroshi Fujioka1,3 (1.IIS, UTokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:GaN, Sputtering