Kohei Ueno

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 9:00 AM - 12:15 PM 503 (503)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[14a-503-1~12] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM

[14a-503-4] Development of heavily doped high electron mobility n-type GaN by pulsed sputtering

〇Kohei Ueno¹, Yasuaki Arakawa¹, Atsushi Kobayashi¹, Jitsuo Otha^1,2, Hiroshi Fujioka^1,3 (1.IIS, UTokyo, 2.JST-PRESTO, 3.JST-ACCEL)