[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

△ [14a-F201-1] Bright-Field X-ray Topography under Normal Incidence and Simultaneous-Diffraction Conditions.

〇(M1)Tetsuya Tsurumaru¹, Hiroyuki Mizuochi¹, Haruka Kamamoto¹, Yoshiyuki Tsusaka^1,2, Yasushi Kagoshima^1,2, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Material Sci., 2.Syn. Rad. Nano-Tech. Center)

Keywords:X-ray topography

Bright field X-ray topography can record the crystal defects such as dislocations without large deformation of the images. We adopt diffractions from equivalent lattice planes {444} to decide Burgers vectors of misfit dislocations generally known as a/2<110> in Si wafer. In order to excite diffractions simultaneously from equivalent four-{444} planes at the configuration of normal incidence, X-rays with the energy of 13.7 keV are employed. Those 444-reflection topographs may reveal some residual contrasts of the dislocations due to g・[b×n]≠0 even though g・b = 0. Then we have also examined other diffractions from {224} planes satisfying both g・b = 0 and g・[b×n] = 0 .