[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 9:15 AM - 12:15 PM F201 (F201)

Kazuhisa Torigoe(SUMCO), Hiroaki Kariyazaki(GWJ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

△ [14a-F201-1] Bright-Field X-ray Topography under Normal Incidence and Simultaneous-Diffraction Conditions.

〇(M1)Tetsuya Tsurumaru¹, Hiroyuki Mizuochi¹, Haruka Kamamoto¹, Yoshiyuki Tsusaka^1,2, Yasushi Kagoshima^1,2, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Material Sci., 2.Syn. Rad. Nano-Tech. Center)

9:30 AM - 9:45 AM

[14a-F201-2] Segregation mechanism of oxygen atoms at tilt boundaries in silicon

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Naoki Ebisawa², Yasuo Shimizu², Koji Inoue², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

9:45 AM - 10:00 AM

[14a-F201-3] Effect of Annealing on Generation of Slip Dislocation from Scratches in Si Wafers

〇JUN FUJISE¹, Toshiaki Ono¹ (1.SUMCO)

10:00 AM - 10:15 AM

[14a-F201-4] Numerical analysis of dislocation density in Si single crystal using oxygen diffusion

〇Satoshi Nakano², Wataru Fukushima¹, Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

10:15 AM - 10:30 AM

▲ [14a-F201-5] Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

〇(P)Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:30 AM - 10:45 AM

▲ [14a-F201-6] Numerical analysis on the free surface of floating zone (FZ) for silicon crystal growth by Volume of Fluid (VOF) model

〇(P)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[14a-F201-7] CZ Si Crystals contacted with Melt during Pull-Stop -Disl. and Oxygen Precipitation-

〇Takao Abe¹, Toru Takahashi¹ (1.ShinEtsu Handotai)

11:15 AM - 11:30 AM

[14a-F201-8] CZSi Crystals contacted with Melt during Pull-Stop -Species and Oxygen Precipitates-

〇Takao Abe¹, Toru Takahashi¹ (1.ShinEtsu Handotai)

11:30 AM - 11:45 AM

[14a-F201-9] Influence of anisotropic thermal stress during a Si crystal growth on behavior of the secondary defects

〇Eiji Kamiyama¹, Yoshiaki Abe¹, Hironori Banba¹, Hiroyuki Saito¹, Susumu Maeda¹, Alexander Kuliev², Masaya Iizuka³, Yuji Mukaiyama³, Koji Sueoka⁴ (1.GlobalWafers Japan Co., Ltd., 2.STR Group-Soft Impact, Ltd., 3.STR Japan K. K., 4.Okayama Pref. Univ.)

11:45 AM - 12:00 PM

[14a-F201-10] Comment on the Voronkov model (3)

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.Institute for Materials Research, Tohoku University)

12:00 PM - 12:15 PM

[14a-F201-11] The mechanisms of self-diffusion in silicon crystals

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R., Tohoku Univ.)

Session information