[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-10] Comment on the Voronkov model (3)

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.Institute for Materials Research, Tohoku University)

Keywords:silicon, point defect, crystal growth

The Voronkov model on the grown-in defects in Si crystals gives important guides to choose growth conditions for growing high-quality crystals. His model, however, is based on the inconsistent assumption that the thermal equilibrium point defects are both Frenkel pairs and Schottky defects. Experimentally, they are the Schottky defects. We modify his model using the properties of Schottky defects. We determine the growth conditions for the occurence of effective recombination between vacancies and interstitials.