The 64th JSAP Spring Meeting, 2017

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

3:45 PM - 4:00 PM

[14p-315-10] Influence of gate recess in AlGaN/GaN HEMTs by neutral beam etching

〇Yo Watamura1, Fuyumi Hemmi1, Cedric Thomas2, Yi-Chun Lai3, Akio Higo3, Seiji Samukawa2,3, Tiichi Otsuji1, Testuya Suemitsu1 (1.RIEC, Tohoku Univ., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

Keywords:nitride semiconductor, electronic device, process technique