[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-14] f_max of 1.3 THz using extended drain-side recess structure in InP-based HEMTs

〇Tsuyoshi Takahashi^1,2, Yoichi Kawano^1,2, Kozo Makiyama^1,2, Shoichi Shiba¹, Masaru Sato^1,2, Yasuhiro Nakasha^1,2, Naoki Hara^1,2 (1.Fujitsu Labs., 2.Fujitsu)

Keywords:HEMT, InP, fmax

A maximum frequency of oscillation (f_max) of 1.3 THz was achieved using an extended drain-side recess structure of InP-based HEMTs, although gate length was relatively long at 75 nm. Asymmetric gate recess structure and double-side doping above and below a channel region was effective in reducing the drain output conductance.