[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-2] Drain current DLTS and MCTS of AlGaN/GaN HEMT on sapphire substrates

〇Kouta Takabayashi¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tech.)

Keywords:AlGaN/GaN HEMT, DLTS, MCTS

We have characterized traps in AlGaN/GaN HEMTs on sapphire by drain current DLTS and MCTS. We also characterize traps in n-GaN Schottky diodes on sapphire by capacitance DLTS and MCTS. Two electron traps E1 (Ec-0.24 eV) and E3 (Ec-0.60 eV), and two hole traps H1 (Ev+0.86 eV) and H3 (Ev+0.25 eV) were observed in both structures by DLTS and MCTS, respectively. This result shows that traps formed during MOCVD growth are present in GaN of AlGaN/GaN HEMTs.