Study on the mechanism of current collapse in GaN-HEMT using the <em>operando</em> microspectroscopy

Keiichi Omika; Yasunori Tateno; Tsuyoshi Kouchi; Tsutomu Komatani; Naoka Nagamura; Shun Konno; Yoshinobu Takahashi; Masato Kotsugi; Koji Horiba; Masaharu Oshima; Maki Suemitsu; Fukidome Hirokazu

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

1:45 PM - 2:00 PM

△ [14p-315-3] Study on the mechanism of current collapse in GaN-HEMT using the operando microspectroscopy

〇Keiichi Omika¹, Yasunori Tateno², Tsuyoshi Kouchi², Tsutomu Komatani³, Naoka Nagamura⁴, Shun Konno⁵, Yoshinobu Takahashi⁵, Masato Kotsugi⁵, Koji Horiba⁶, Masaharu Oshima⁷, Maki Suemitsu¹, Fukidome Hirokazu¹ (1.RIEC, Tohoku Univ., 2.Sumitomo Electric Inds. Ltd., 3.Sumitomo Electric Device Innovations. Inc., 4.NIMS, 5.Tokyo Univ. of science, 6.KEK/PF, 7.The Univ. of Tokyo)

Keywords:current collapse, operando microspectroscopy