[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-5] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (4)
-- Metal work function dependence of Schottky barrier height --

〇Hiroyoshi Imadate¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:m-plane n-GaN, Schottky contact, metal work function

We have characterized electrical properties of contacts with 6 different Schottky metals (Ag, Ti, Cr, Au, Pd, Ni) formed on cleaved m-plane n-GaN surfaces by I-V measurements. S-value was obtained to be 0.468 from the I-V characteristic. It was found that the m-plane n-GaN has metal work function dependence as large as that on the c-plane n-GaN.