Hiroyoshi Imadate

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

2:15 PM - 2:30 PM

[14p-315-5] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (4)
-- Metal work function dependence of Schottky barrier height --

〇Hiroyoshi Imadate¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)