[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-6] Facet Dependence of Leakage Current in m-plane GaN Schottky Barrier Diode

Ousmane1 Barry¹, 〇Atsushi Tanaka², Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ, 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.NU VBL)

Keywords:gallium nitride, schottky barrier diode, m plane