[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-7] Wafer-level nondestructive inspection regarding the substrate off-angle and the yellow luminescence of n^--drift layer in vertical GaN-on-GaN Schottky diodes

〇FUMIMASA HORIKIRI¹, YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹, TOSHIO KITAMURA¹, HIROSHI OHTA², TOHRU NAKAMURA², TOMOYOSHI MISHIMA² (1.Sciocs Co. Ltd., 2.Hosei Univ.)

Keywords:GaN, power device, nondestructive inspection

In this study, we demonstrate the wafer-level nondestructive inspection of GaN Schottky barrier diode epi-structures grown by MOVPE on free-standing GaN substrates, which have various off-angles and deviations. Yellow photoluminescence intensities of the n-drift layer were revealed as functions of the substrate off-angle. The distribution of the net donor concentration indicates that carbon impurity steeply increases in the low off-angle region. We will also report the results of the C-V and SIMS.