[14p-315-1~15] 13.8 Compound and power electron devices and process technology

△ [14p-315-8] Relationship between dislocations and leakage current of p-n diodes on free-standing GaN substrate

〇Shigeyoshi Usami¹, Yuto Ando¹, Atsushi Tanaka², Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.NU VBL)

Keywords:Nitride semiconductos, PN diodes, Emission microscope