16:00 〜 16:15
▲ [14p-412-11] Pulsed Gas Mixtures for Sharp Doping Transitions in Diamond Multilayers
キーワード：diamond, boron doping, plasma
Sharp transitions from heavily boron-doped (p+, [B] ≥ 5×1020 cm−3) to lightly boron-doped (p–, [B] ≤ 1017 cm−3) diamond films organized in multilayers (ML) can be the key technology to build power transistors, or optical systems. The most important challenge concern the MPCVD, which must guarantee reproducible boron concentrations and films thicknesses in the ML deposition process. In this study, we focused on the effects of oxygen and boron pluses injections in the gas mixture to shape doping transitions in ML.
We analysed boron-doped ML by SIMS, and performed time-resolved optical emission spectroscopy (OES) during the process. The pulsed injection of TMB gave a doping slope two times smoother than the transition following the O2 pulsed injection, but in both cases, the response of the BH* (433 nm) intensity was quick. This discrepancy between SIMS boron profile and OES data pointed out the different kinetics of chemical reactions at the diamond surface and inside the plasma discharge.
We analysed boron-doped ML by SIMS, and performed time-resolved optical emission spectroscopy (OES) during the process. The pulsed injection of TMB gave a doping slope two times smoother than the transition following the O2 pulsed injection, but in both cases, the response of the BH* (433 nm) intensity was quick. This discrepancy between SIMS boron profile and OES data pointed out the different kinetics of chemical reactions at the diamond surface and inside the plasma discharge.