[14p-412-1~18] 6.2 Carbon-based thin films

[14p-412-17] Dislocation analysis of p⁺ HPHT diamond by X-ray topography

〇(M1)Eiichi Kamei¹, Koji Yamaguchi¹, Yuki Tsuchida¹, Shinichi Shikata¹ (1.Kwangaku Univ.)

Keywords:diamond

X-ray topography measurements both by the reflection and transmission geometries of the p type HPHT crystal was carried out using SR X-ray (in Kyusyu Synchrotron Light RC: BL09). The etch pits were formed by dry etching by H2 plasma using microwave CVD system to reveal the dislocations. Four growth sectors to (111) and its equivalent directions and one growth sector to (001) are clearly observed with wide growth sector boundaries. Highly dense etch pits are observed on the dislocation line of <1-10>, and large etch pits are observed on the cross point of the dislocation lines of <110> and <1-10>. Above phenomena is peculiar to the p type substrate and had not been observed in insulating substrate, indicating several challenges remained for p type substrate growth technology.