[14p-412-1~18] 6.2 Carbon-based thin films

[14p-412-7] Surface Damage of Boron-doped Diamond by ICP etching

〇Yukako Kato¹, Hiroyuki Kawashima^1,2, Toshiharu Makino¹ (1.AIST, 2.Tsukuba Univ.)

Keywords:diamond, surface damage, Etching

In our presentation, we will report that the ICP etching damage of diamond film surface estimated by angle-resolved XPS. Diamond is expected to be a power device material as wide-gap semiconducting material. For the development of high performance diamond power device, an advanced device process without material damage is important core device technique. We focus ICP etching which is basic device process technique of diamond power device. By using angle-resolved XPS, we estimated amount of oxidized carbon at the diamond surface before/after etching to find optimized condition for non-damage ICP etching process for diamond.