15:30 〜 15:45
▲ [14p-412-9] The Effect of Annealing in Oxygen Ambient on the Single Crystal Diamond Mechanical Resonators
キーワード：MEMS, diamond
The exceptional mechanical and tribological properties, the highest thermal conductivity, chemicalinertness, and outstanding thermal stability of diamond make it attractive for micro- or nano-electromechanical system (MEMS/NEMS). Due to the high reproducibility in the fabrication of single crystal diamond (SCD) MEMS/NEMS structures and the high reliability of the corresponding devices, SCD MEMS/NEMS has aroused growing interest. We have developed the ion-implantation assisted lift-off (IAL) technique for the batch fabrication of nanoscale SCD resonators and NEMS switches in a controlled manner. The IAL method offers the facile systematic integration for MEMS/NEMS applications. Generally, the quality factor (Q-factor) is the most important key figure-of-merit for MEMS/NEMS. We realized that the Q-factor of the IAL SCD resonator was strongly degraded by the ion-implantation induced damaged layer. Therefore, we made efforts in improving the Q-factor by growing thick SCD layer to reduce the effect of the damaged layer at the cantilever bottom. On the other hand, it is expected the Q-factor could be much improved if the whole damaged layer could be removed.
In this work, we investigate the effect of the high-temperature annealing in oxygen ambient on the resonance properties of the SCD cantilevers.
In this work, we investigate the effect of the high-temperature annealing in oxygen ambient on the resonance properties of the SCD cantilevers.