[14p-423-1~14] CS.4 7. Code-sharing Session: Beam Technology and Nanofabrication

[14p-423-3] Effect of addition of sulfones into chemically amplified resists

〇Kazumasa Okamoto^1,2, Shinya Fujii¹, Hiroki Yamamoto², Takahiro Kozawa², Toshiro Itani³ (1.Hokkaido Univ., 2.Osaka Univ., 3.EIDEC, Inc)

Keywords:chemically amplified resist, electron beam and EUV lithography, sensitivity improvement

The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution for this trade-off problem. In this study, the feasibility and the mechanism of improving chemically amplified resists performance by adding sulfones were investigated.