2017年第64回応用物理学会春季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[14p-501-1~6] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

10.1と10.2と10.3と10.4のコードシェアセッションあり

2017年3月14日(火) 13:00 〜 14:30 501 (501)

桜庭 裕弥(物材機構)

13:30 〜 13:45

[14p-501-3] Relation between Emission Power and Diameter of Spin Torque Oscillator: Micromagnetic Simulation Study

田中 智大1、古屋 篤史1、上原 裕二1、清水 香壱1、藤崎 淳1、大島 弘敬2、久保田 均3、今村 裕志3 (1.富士通、2.富士通研究所、3.産総研)

キーワード:spin torque oscillator, micromagnetics

The spin torque oscillators (STOs) are considered as the important devices, because the STOs are expected to be applied in many fields, such as a microwave generator or a magnetic field sensor. Therefore, the development of the STOs with the high emission power and the high Q-factor is in high demand. It has, however, been reported that the emission power of a nano-pillar STO reaches to maximum around 300nm in the diameter. To elucidate this phenomenon, it is important to study the spatial magnetization dynamics of the STOs which show the decrease in the emission power at the large diameter. The STO devices are simulated by the micromagnetics. The results show that the peak of the emission power exists around 300nm in the diameter, and indicate that the magnetization dynamics changes to the incoherent at larger diameter. We will address the mechanism which causes such degradation of the emission power and the physical properties which enhance the emission power.