The 64th JSAP Spring Meeting, 2017

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21 Joint Session K » 21.1 Joint Session K

[14p-502-1~15] 21.1 Joint Session K

Tue. Mar 14, 2017 1:45 PM - 5:45 PM 502 (502)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

2:45 PM - 3:00 PM

[14p-502-5] Relationship of crystal defects and leakage current of (001) β-Ga2O3 Schottky barrier diodes

〇Akihiro Hashiguchi1, Tomoya Moribayashi1, Takahito Oshima1, Toshiyuki Oishi1, Kimiyoshi Koshi2, Kouhei Sasaki2, Akito Kuramata2, Osamu Ueda3, Makoto Kasu1 (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)

Keywords:Ga2O3